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1. product profile 1.1 general description the bf1215 is a combination of two dual gate mosfet amplifiers with shared source lead, shared gate2 lead and an integrated switch. the source and substrate are interconnected. in ternal bias circuits enable dc stabilization and a very good cross modulation performa nce during agc. integrated diodes between the gates and source protect against excessive input volta ge surges. the transistor is availiable as a sot363 micr o-miniature plastic package. 1.2 features and benefits ? two low noise gain controlled am plifiers in a single package; one with full internal bias and one with partial internal bias ? superior cross modulation performance during agc ? high forward transfer admittance to input capacitance ratio ? suitable for vhf and uhf applications: both amplifiers are optimized for vhf applications. ? internal switch reduces external components 1.3 applications ? gain controlled low noise amp lifiers for vhf and uhf applications with a 5 v supply ? digital and analog television tuners ? professional communication equipment bf1215 dual n-channel dual gate mosfet rev. 01 ? 6 may 2010 product data sheet caution this device is sensitive to electrostatic di scharge (esd). therefore care should be taken during transport and handling.
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 2 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet 1.4 quick reference data [1] t sp is the temperature at the soldering point of the source lead. [2] calculated from s-parameters. [3] measured in figure 32 and figure 33 test circuits. 2. pinning information 3. ordering information table 1. quick reference data for amplifier a and b symbol parameter conditions min typ max unit v ds drain-source voltage dc - - 6 v i d drain current dc - - 30 ma p tot total power dissipation t sp 107 c [1] --180mw | y fs | forward transfer admittance f = 100 mhz; t j =25 c; i d =19ma 23 27 38 ms c iss(g1) input capacitance at gate1 f = 100 mhz [2] -2.5- pf c rss reverse transfer capacitance f = 100 mhz [2] -27- ff nf noise figure f = 400 mhz; y s =y s(opt) -1.5- db f=800mhz; y s =y s(opt) -1.9- db xmod cross modulation input level for k = 1 % at 40 db agc; f w =50mhz; f unw =60mhz [3] 105 107 - db v t j junction temperature - - 150 c table 2. discrete pinning pin description simplified outline graphic symbol 1 gate1 (amplifier a) 2gate2 3 gate1 (amplifier b) 4 drain (amplifier b) 5source 6 drain (amplifier a) 13 2 4 5 6 sym033 g1 (b) g1 (a) g2 s d (a) d (b) amp b amp a table 3. ordering information type number package name description version bf1215 - plastic surface-mounted package; 6 leads sot363
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 3 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet 4. marking 5. limiting values [1] t sp is the temperature at the soldering point of the source lead. table 4. marking type number marking description bf1215 m4p made in hong kong m4t made in malaysia m4w made in china table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per mosfet v ds drain-source voltage dc - 6 v i d drain current dc - 30 ma i g1 gate1 current - 10 ma i g2 gate2 current - 10 ma p tot total power dissipation t sp 107 c [1] -180mw t stg storage temperature ? 65 +150 c t j junction temperature - 150 c fig 1. power derating curve t sp (?c) 0 200 150 50 100 001aac193 100 150 50 200 250 p tot (mw) 0
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 4 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet 6. thermal characteristics 7. static characteristics [1] r g1 connects gate1 amplifier b to v gg = 0 v, see figure 2 . [2] r g1 connects gate1 amplifier b to v gg = 5 v, see figure 2 . table 6. thermal characteristics symbol parameter conditions typ unit r th(j-sp) thermal resistance from junction to solder point 240 k/w table 7. static characteristics t j =25 c. symbol parameter conditions min typ max unit per mosfet; unless otherwise specified v (br)dss drain-source breakdown voltage v g1-s =v g2-s =0v; i d =10 a amplifier a 6 - - v amplifier b 6 - - v v (br)g1-ss gate1-source breakdown voltage v g2-s =v ds =0v; i g1-s =10ma 6 - 10 v v (br)g2-ss gate2-source breakdown voltage v g1-s =v ds =0v; i g2-s =10ma 6 - 10 v v f(s-g1) forward source-gate1 voltage v g2-s =v ds =0v; i s-g1 = 10 ma 0.5 - 1.5 v v f(s-g2) forward source-gate2 voltage v g1-s =v ds =0v; i s-g2 = 10 ma 0.5 - 1.5 v v g1-s(th) gate1-source threshold voltage v ds =5v; v g2-s =4v; i d = 100 a 0.3 - 1.0 v v g2-s(th) gate2-source threshold voltage v ds =5v; v g1-s =5v; i d = 100 a 0.4 - 1.0 v i ds drain-source current v g2-s =4v; v ds(b) =5v; r g1 = 39 k amplifier a: v ds(a) =5v [1] - - 19.5 ma amplifier b [2] --23ma i g1-s gate1 cut-off current v g2-s =0v; v ds(a) =v ds(b) =0v amplifier a: v g1-s(a) =5v - - 50 na amplifier b: v g1-s(b) =5v - - 50 na i g2-s gate2 cut-off current v g2-s =4v; v ds(a) =v ds(b) =0v; v g1-s(a) =v g1-s(b) =0v - - 20 na v gg = 5 v: amplifier a is off; amplifier b is on. v gg = 0 v: amplifier a is on; amplifier b is off. fig 2. functional diagram 001aaa55 3 r g1 v gg g1 (b) g2 g1 (a) d (b) s d (a)
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 5 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet 8. dynamic characteristics [1] calculated from s-parameters. [2] measured in figure 32 and figure 33 test circuits. table 8. dynamic characteristics for amplifier a and b common source; t amb =25 c; v g2-s =4v; v ds =5v; i d =19ma. symbol parameter conditions min typ max unit | y fs | forward transfer admittance f = 100 mhz; t j =25 c232738ms c iss(g1) input capacitance at gate1 f = 100 mhz [1] -2.5-pf c iss(g2) input capacitance at gate2 f = 100 mhz [1] -2.5-pf c oss output capacitance f = 100 mhz [1] -0.8-pf c rss reverse transfer capacitance f = 100 mhz [1] -27-ff g tr transducer power gain amplifier a: b s =b s(opt) ; b l =b l(opt) [1] f = 200 mhz; g s =2ms; g l = 0.5 ms 30 34 38 db f = 400 mhz; g s =2ms; g l = 1 ms 26 30 34 db f = 800 mhz; g s = 3.3 ms; g l = 1 ms 22 26 30 db amplifier b: b s =b s(opt) ; b l =b l(opt) [1] f = 200 mhz; g s =2ms; g l = 0.5 ms 30 34 38 db f = 400 mhz; g s =2ms; g l = 1 ms 26 31 34 db f = 800 mhz; g s = 3.3 ms; g l = 1 ms 22 26 30 db nf noise figure f = 11 mhz; g s =20ms; b s =0 s - - 6 db f = 400 mhz; y s =y s(opt) -1.5-db f = 800 mhz; y s =y s(opt) -1.9-db xmod cross modulation input level for k = 1 %; f w =50mhz; f unw =60mhz [2] at 0 db agc 95 104 - db v at 10 db agc - 100 - db v at 20 db agc - 104 - db v at 40 db agc 105 107 - db v
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 6 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet 8.1 graphics for amplifier a (1) v g2-s =4v. (2) v g2-s =3.5v. (3) v g2-s =3v. (4) v g2-s =2.5v. (5) v g2-s =2v. (6) v g2-s =1.5v. (7) v g2-s =1v. v ds(a) =5v; v g1-s(b) =v ds(b) =0v; t j =25 c. (1) v g1-s(a) =1.9v. (2) v g1-s(a) =1.8v. (3) v g1-s(a) =1.7v. (4) v g1-s(a) =1.6v. (5) v g1-s(a) =1.5v. (6) v g1-s(a) =1.4v. (7) v g1-s(a) =1.3v. (8) v g1-s(a) =1.2v. (9) v g1-s(a) =1.1v. v g2-s =4v; v g1-s(b) =v ds(b) =0v; t j =25 c. fig 3. amplifier a transfer characteristics; typical values fig 4. amplifier a output characteristics; typical values v g1-s (v) 0 2.5 2.0 1.0 1.5 0.5 001aal549 10 20 30 i d (ma) 0 (1) (2) (3) (4) (5) (6) (7) v ds (v) 06 4 2 001aal550 10 20 30 i d (ma) 0 (1) (2) (3) (4) (5) (6) (7) (8) (9)
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 7 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet (1) v g2-s =4v. (2) v g2-s =3.5v. (3) v g2-s =3v. (4) v g2-s =2.5v. (5) v g2-s =2v. (6) v g2-s =1.5v. v ds(a) =5v; v g1-s(b) =v ds(b) =0v; t j =25 c. v ds(a) =5v; v g2-s =4v; v ds(b) =5v; v g1-s(b) =0v; t j =25 c. i d(b) = internal gate1 current = current on pin drain ( amplifier b) if mosfet (b) is switched off. fig 5. amplifier a forward transfer admittance as a function of drain current; typical values fig 6. amplifier a drain current as a function of internal gate1 current; typical values i d (ma) 025 20 10 15 5 001aal551 10 20 30 |y fs | (ms) 0 (1) (2) (3) (4) (5) (6) 001aal552 i d(b) ( a) 060 40 20 8 4 12 16 i d(a) (ma) 0
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 8 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet v ds(a) =v ds(b) =v sup ; v g2-s =4v; t j =25 c; r g1 =39k (connected to ground); see figure 2 . (1) v ds(b) =4v. (2) v ds(b) =3.5v. (3) v ds(b) =3v. (4) v ds(b) =2.5v. (5) v ds(b) =2v. (6) v ds(b) =1.5v. v ds(a) =5v; v g1-s(b) = 0 v; gate1 ( amplifier a) is open; t j =25 c. fig 7. amplifier a drain current as a function of the supply voltage to amplifiers a and b; typical values fig 8. amplifier a drain current as a function of gate2 voltage; typical values v ds(a) =v ds(b) =5v; v g1-s(b) =0v; f w =50mhz; f unw =60mhz; t amb =25 c; see figure 32 . v ds(a) =v ds(b) =5v; v g1-s(b) =0v; f=50mhz; t j =25 c; see figure 32 . fig 9. amplifier a unwanted voltage for 1 % cross modulation as a function of gain reduction; typical values fig 10. amplifier a gain reduction as a function of agc voltage; typical values v sup (v) 05 4 23 1 001aal553 10 5 15 20 i d (ma) 0 v g2-s (v) 05 4 23 1 001aal554 20 10 30 40 i d (ma) 0 (1) (2) (3) (4) (5) (6) gain reduction (db) 050 40 20 30 10 001aal555 100 90 110 120 xmod (db v) 80 v agc (v) 04 3 12 001aal556 30 20 40 10 0 gain reduction (db) 50
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 9 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet v ds(a) =v ds(b) =5v; v g1-s(b) =0v; f=50mhz; t j =25 c; see figure 32 . v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma; t j =25 c. fig 11. amplifier a drain current as a function of gain reduction; typical values fig 12. amplifier a input admittance as a function of frequency; typical values v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma; t j =25 c. v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma; t j =25 c. fig 13. amplifier a forward transfer admittance and phase as a function of frequency; typical values fig 14. amplifier a reverse transfer admittance and phase as a function of frequency; typical values gain reduction (db) 050 40 20 30 10 001aal557 20 10 30 40 i d (ma) 0 001aal558 f (mhz) 10 10 3 10 2 10 ? 1 1 10 10 2 g is , b is (ms) 10 ? 2 g is b is f (mhz) 10 10 3 10 2 001aal559 10 10 2 |y fs | (ms) 1 ? 10 ? 10 2 ? fs (deg) ? 1 |y fs | ? fs 001aal560 10 2 10 10 3 |y rs | (ms) 1 ? 10 2 ? 10 ? 10 3 ? rs (deg) ? 1 f (mhz) 10 10 3 10 2 |y rs | ? rs
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 10 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet 8.2 scattering paramete rs for amplifier a 8.3 noise data for amplifier a v ds(a) =5v; v g2-s =4v; v ds(b) =v g1-s(b) =0v; i d(a) =19ma; t j =25 c. fig 15. amplifier a output admittance as a function of frequency; typical values 001aal561 1 10 ? 1 10 b os , g os (ms) 10 ? 2 f (mhz) 10 10 3 10 2 b os g os table 9. scattering parameters for amplifier a v ds(a) =5v; v g2-s =4v; i d(a) =19ma; v ds(b) =0v;v g1-s(b) =0v; t amb = 25 c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) 50 0.992 ? 4.61 2.80 175.87 0.00078 95.65 0.993 ? 1.38 100 0.991 ? 8.79 2.80 172.12 0.00145 83.73 0.994 ? 2.76 200 0.986 ? 17.57 2.77 164.25 0.00292 78.53 0.992 ? 5.50 300 0.977 ? 26.11 2.74 156.52 0.00415 73.60 0.991 ? 8.21 400 0.966 ? 34.46 2.69 148.98 0.00528 69.27 0.989 ? 10.91 500 0.952 ? 42.75 2.64 141.49 0.00620 64.79 0.986 ? 13.58 600 0.936 ? 50.92 2.58 134.13 0.00691 60.71 0.984 ? 16.22 700 0.920 ? 58.79 2.50 127.01 0.00733 57.37 0.982 ? 18.86 800 0.902 ? 66.40 2.43 120.04 0.00758 54.40 0.979 ? 21.47 900 0.881 ? 73.87 2.36 113.24 0.00763 52.13 0.978 ? 24.00 1000 0.861 ? 81.10 2.28 106.69 0.00749 50.46 0.976 ? 26.55 table 10. noise data for amplifier a v ds(a) =5v; v g2-s =4v; i d(a) =19ma; v ds(b) =0v; v g1-s(b) =0v; t amb =25 c; typical values; unless otherwise specified. f (mhz) nf min (db) opt r n (ratio) (ratio) (degree) 400 0.9 0.810 27.95 0.884 800 1.4 0.697 56.50 0.717
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 11 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet 8.4 graphics for amplifier b (1) v g2-s =4v. (2) v g2-s =3.5v. (3) v g2-s =3v. (4) v g2-s =2.5v. (5) v g2-s =2v. (6) v g2-s =1.5v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c. (1) v g1-s(b) =1.9v. (2) v g1-s(b) =1.8v. (3) v g1-s(b) =1.7v. (4) v g1-s(b) =1.6v. (5) v g1-s(b) =1.5v. (6) v g1-s(b) =1.4v. (7) v g1-s(b) =1.3v. (8) v g1-s(b) =1.2v. (9) v g1-s(b) =1.1v. v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c. fig 16. amplifier b transfer characteristics; typical values fig 17. amplifier b output characteristics; typical values v g1-s (v) 0 2.5 2.0 1.0 1.5 0.5 001aal562 10 20 30 i d (ma) 0 (1) (2) (3) (4) (5) (6) (7) v ds (v) 06 4 2 001aal563 10 20 30 i d (ma) 0 (1) (2) (3) (4) (5) (6) (7) (8) (9)
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 12 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet (1) v g2-s =4v. (2) v g2-s =3.5v. (3) v g2-s =3v. (4) v g2-s =2.5v. (5) v g2-s =2v. (6) v g2-s =1.5v. (7) v g2-s =1v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c. (1) v g2-s =4v. (2) v g2-s =3.5v. (3) v g2-s =3v. (4) v g2-s =2.5v. (5) v g2-s =2v. (6) v g2-s =1.5v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c. fig 18. amplifier b gate1 current as a function of gate1 voltage; typical values fig 19. amplifier b forward transfer admittance as a function of drain current; typical values v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c. v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1 =39k (connected to v gg ); see figure 2 . fig 20. amplifier b drain current as a function of gate1 current; typical values fig 21. amplifier b drain current as a function of gate1 supply voltage; typical values v g1-s (v) 0 2.5 2.0 1.0 1.5 0.5 001aal564 50 25 75 100 i g1 ( a) 0 (1) (2) (3) (4) (5) (6) i d (ma) 025 20 10 15 5 001aal565 10 20 30 |y fs | (ms) 0 (1) (2) (3) (4) (5) (6) 001aal566 i g1 ( a) 060 40 20 8 4 12 16 i d (ma) 0 v gg (v) 05 4 23 1 001aal567 10 5 15 20 i d (ma) 0
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 13 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet (1) r g1 =12k . (2) r g1 =27k . (3) r g1 =39k . (4) r g1 =67k . (5) r g1 =80k . v g2-s =4v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1 is connected to v gg ; see figure 2 . (1) v gg =4.0v. (2) v gg =3.5v. (3) v gg =3.0v. (4) v gg =2.5v. (5) v gg =2.0v. (6) v gg =1.5v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1 =39k (connected to v gg ); see figure 2 . fig 22. amplifier b drain current as a function of gate1 supply voltage and drain supply voltage; typical values fig 23. amplifier b drain current as a function of gate2 voltage; typical values v gg = v ds (v) 05 4 23 1 001aal568 20 10 30 40 i d (ma) 0 (1) (2) (3) (4) (5) v g2-s (v) 05 4 23 1 001aal569 20 10 30 40 i d (ma) 0 (1) (2) (3) (4) (5) (6)
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 14 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet (1) v gg =5.0v. (2) v gg =4.5v. (3) v gg =4.0v. (4) v gg =3.5v. (5) v gg =3.0v. v ds(b) =5v; v ds(a) =v g1-s(a) =0v; t j =25 c; r g1 =39k (connected to v gg ); see figure 2 . v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1 =39k (connected to v gg ); f w =50mhz; f unw =60mhz; t amb =25 c; see figure 33 . fig 24. amplifier b gate1 current as a function of gate2 voltage; typical values fig 25. amplifier b unwanted voltage for 1 % cross modulation as a function of gain reduction; typical values v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1 =39k (connected to v gg ); f = 50 mhz; t amb =25 c; see figure 33 . v ds(b) =5v; v gg =5v; v ds(a) =v g1-s(a) =0v; r g1 =39k (connected to v gg ); f = 50 mhz; t amb =25 c; see figure 33 . fig 26. amplifier b gain reduction as a function of agc voltage; typical values fig 27. amplifier b drain current as a function of gain reduction; typical values v g1-s (v) 05 4 23 1 001aal570 50 25 75 100 i g1 ( a) 0 (1) (2) (3) (4) (5) gain reduction (db) 050 40 20 30 10 001aal571 100 90 110 120 xmod (db v) 80 v agc (v) 04 3 12 001aal572 30 20 40 10 0 gain reduction (db) 50 gain reduction (db) 050 40 20 30 10 001aal573 20 10 30 40 i d (ma) 0
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 15 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) = 0 v; i d(b) =19ma; t j =25 c. v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) = 0 v; i d(b) =19ma; t j =25 c. fig 28. input admittance as a function of frequency; typical values fig 29. forward transfer admittance and phase as a function of frequency; typical values v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) = 0 v; i d(b) =19ma; t j =25 c. v ds(b) =5v; v g2-s =4v; v ds(a) =v g1-s(a) = 0 v; i d(b) =19ma; t j =25 c. fig 30. reverse transfer admittance and phase as a function of frequency; typical values fig 31. output admittance as a function of frequency; typical values 001aal574 f (mhz) 10 10 3 10 2 10 ? 1 1 10 10 2 g is , b is (ms) 10 ? 2 g is b is f (mhz) 10 10 3 10 2 001aal575 10 10 2 |y fs | (ms) 1 ? 10 ? 10 2 ? fs (deg) ? 1 |y fs | ? fs 001aal576 10 2 10 10 3 |y rs | (ms) 1 ? 10 2 ? 10 ? 10 3 ? rs (deg) ? 1 f (mhz) 10 10 3 10 2 |y rs | ? rs 001aal577 1 10 ? 1 10 b os , g os (ms) 10 ? 2 f (mhz) 10 10 3 10 2 b os g os
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 16 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet 8.5 scattering paramete rs for amplifier b 8.6 noise data for amplifier b table 11. scattering parameters for amplifier b v ds(b) =5v; v g2-s =4v; i d(b) =15ma; v ds(a) =0v;v g1-s(a) =0v; t amb = 25 c; typical values. f (mhz) s 11 s 21 s 12 s 22 magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) magnitude (ratio) angle (degree) 50 0.987 ? 4.68 2.77 175.73 0.00074 100.59 0.992 ? 1.47 100 0.983 ? 8.74 2.75 171.97 0.00147 85.47 0.992 ? 3.03 200 0.979 ? 17.33 2.73 164.04 0.00291 83.85 0.991 ? 6.07 300 0.970 ? 25.74 2.70 156.20 0.00422 82.04 0.989 ? 9.06 400 0.961 ? 33.99 2.66 148.55 0.00547 80.56 0.987 ? 12.03 500 0.948 ? 42.21 2.60 140.92 0.00654 79.15 0.986 ? 14.99 600 0.932 ? 50.29 2.54 133.41 0.00744 78.33 0.983 ? 17.97 700 0.917 ? 58.13 2.47 126.14 0.00822 78.46 0.981 ? 20.93 800 0.900 ? 65.75 2.40 119.00 0.00890 78.92 0.978 ? 23.84 900 0.981 ? 73.19 2.33 112.02 0.00947 80.11 0.977 ? 26.71 1000 0.962 ? 80.36 2.25 105.26 0.00997 81.84 0.975 ? 29.63 table 12. noise data for amplifier b v ds(b) =5v; v g2-s =4v; i d(b) =19ma; v ds(a) =0v; v g1-s(a) =0v; t amb =25 c; typical values; unless otherwise specified. f (mhz) nf min (db) opt r n ( ) (ratio) (deg) 400 1.1 0.755 27.61 0.860 800 1.6 0.659 56.19 0.712
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 17 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet 9. test information fig 32. cross-modulation test set-up for amplifier a. 001aal57 8 50 50 r gen 50 r l 50 l2 2.2 h 10 k r g1 v i 4.7 nf g2 v agc v ds(a) 5 v v ds(b) 5 v v gg 0 v 4.7 nf g1 (b) 4.7 nf 4.7 nf 4.7 nf 4.7 nf g1 (a) s d (b) d (a) bf1215 l1 2.2 h fig 33. cross-modulation test set-up for amplifier b. 001aal57 9 50 50 r gen 50 r l 50 l2 2.2 h 10 k r g1 v i 4.7 nf g2 v agc v ds(a) 5 v v ds(b) 5 v v gg 5 v 4.7 nf g1 (b) 4.7 nf 4.7 nf 4.7 nf 4.7 nf g1 (a) s d (b) d (a) bf1215 l1 2.2 h
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 18 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet 10. package outline fig 34. package outline sot363 references outline version european projection issue date iec jedec jeita sot363 sc-88 wb m b p d e 1 e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface-mounted package; 6 leads sot36 3 unit a 1 max b p cd e e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 04-11-08 06-03-16
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 19 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet 11. abbreviations 12. revision history table 13. abbreviations acronym description agc automatic gain control dc direct current mosfet metal-oxide-semiconductor field-effect transistor uhf ultra high frequency vhf very high frequency table 14. revision history document id release date data sheet status change notice supersedes bf1215_1 20100506 product data sheet - -
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 20 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 13.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interrupt ion, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
bf1215_1 all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2010. all rights reserved. product data sheet rev. 01 ? 6 may 2010 21 of 22 nxp semiconductors bf1215 dual n-channel dual gate mosfet quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive s pecifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors bf1215 dual n-channel dual gate mosfet ? nxp b.v. 2010. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 6 may 2010 document identifier: bf1215_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 2 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 8 dynamic characteristics . . . . . . . . . . . . . . . . . . 5 8.1 graphics for amplifier a . . . . . . . . . . . . . . . . . . 6 8.2 scattering parameters for amplifier a . . . . . . . 10 8.3 noise data for amplifier a . . . . . . . . . . . . . . . . 10 8.4 graphics for amplifier b . . . . . . . . . . . . . . . . . 11 8.5 scattering parameters for amplifier b . . . . . . . 16 8.6 noise data for amplifier b . . . . . . . . . . . . . . . . 16 9 test information . . . . . . . . . . . . . . . . . . . . . . . . 17 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 18 11 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 19 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 19 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 20 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 20 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 21 14 contact information. . . . . . . . . . . . . . . . . . . . . 21 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

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